Discrete Semiconductor Products
NVMYS021N06CLTWG
ActiveON Semiconductor
POWER MOSFET 60 V, 21MΩ, 27 A, SINGLE N-CHANNEL
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Discrete Semiconductor Products
NVMYS021N06CLTWG
ActiveON Semiconductor
POWER MOSFET 60 V, 21MΩ, 27 A, SINGLE N-CHANNEL
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMYS021N06CLTWG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 27 A, 9.8 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 5 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1023, 4-LFPAK |
| Power Dissipation (Max) | 3.8 W, 28 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 21 mOhm |
| Supplier Device Package | LFPAK4 |
| Supplier Device Package [x] | 5 |
| Supplier Device Package [y] | 6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.35 | |
| 10 | $ 0.85 | |||
| 100 | $ 0.56 | |||
| 500 | $ 0.44 | |||
| 1000 | $ 0.40 | |||
| Digi-Reel® | 1 | $ 1.35 | ||
| 10 | $ 0.85 | |||
| 100 | $ 0.56 | |||
| 500 | $ 0.44 | |||
| 1000 | $ 0.40 | |||
| Tape & Reel (TR) | 3000 | $ 0.35 | ||
| 6000 | $ 0.33 | |||
| 9000 | $ 0.32 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.18 | |
| 10 | $ 0.72 | |||
| 25 | $ 0.66 | |||
| 50 | $ 0.59 | |||
| 100 | $ 0.52 | |||
| 250 | $ 0.47 | |||
| 500 | $ 0.41 | |||
| 1000 | $ 0.38 | |||
| ON Semiconductor | N/A | 1 | $ 0.29 | |
Description
General part information
NVMYS021N06CL Series
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Documents
Technical documentation and resources