EGP31A-E3/C

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DIODE GEN PURP 50V 3A DO201AD

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Discrete Semiconductor Products

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DIODE GEN PURP 50V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	EGP31A-E3/C

Capacitance @ Vr, F	117 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV

Part	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Speed
Vishay General Semiconductor - Diodes Division EGP31D-E3/D	117 pF	175 ░C	-65 C	Standard	2 µA	50 ns	200 V	DO-201AD Axial	DO-201AD	3 A	Through Hole	950 mV	200 mA 500 ns
Vishay General Semiconductor - Diodes Division EGP31A-E3/C	117 pF	175 ░C	-65 C	Standard	5 µA	50 ns	50 V	DO-201AD Axial	DO-201AD	3 A	Through Hole	950 mV	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 3A Through Hole DO-201AD

Technical documentation and resources