IXKH70N60C5
ActiveDISC MOSFET N-CH SUPER JUNC C5-CLASS/ TUBE
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IXKH70N60C5
ActiveDISC MOSFET N-CH SUPER JUNC C5-CLASS/ TUBE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXKH70N60C5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 190 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 6800 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Rds On (Max) @ Id, Vgs | 45 mOhm |
| Supplier Device Package | TO-247AD |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXKH70N60C5 Series
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG.
Documents
Technical documentation and resources