Discrete Semiconductor Products

AUIRLU3114Z

Obsolete

AUIRLU3114Z - 20V-40V N-CHANNEL

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Discrete Semiconductor Products

Obsolete

AUIRLU3114Z - 20V-40V N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRLU3114Z

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3810 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	140 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	4.9 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Qualification	Vgs(th) (Max) @ Id	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Grade
Infineon Technologies AUIRLU3114Z	Through Hole	AEC-Q101	2.5 V	MOSFET (Metal Oxide)	N-Channel	130 A	PG-TO251-3	3810 pF	16 V	-55 °C	175 ░C	IPAK TO-251-3 Short Leads TO-251AA	56 nC	140 W	4.9 mOhm	4.5 V 10 V	40 V	Automotive
Infineon Technologies AUIRLU3114Z	Through Hole	AEC-Q101	2.5 V	MOSFET (Metal Oxide)	N-Channel	130 A	PG-TO251-3	3810 pF	16 V	-55 °C	175 ░C	IPAK TO-251-3 Short Leads TO-251AA	56 nC	140 W	4.9 mOhm	4.5 V 10 V	40 V	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 130A (Tc) 140W (Tc) Through Hole PG-TO251-3

Technical documentation and resources