Discrete Semiconductor Products

1N4937T/R

Active

DIODE GEN PURP 600V 1A DO41

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4937T/R

Capacitance	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-65 °C
Package / Case	Axial, DO-204AL, DO-41
Package Name	DO-41
Reverse Recovery Time (trr)	150 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	600 V
Voltage - Forward (Vf) (Max)	1.2 V

Part	Capacitance	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Technology	Voltage - Forward (Vf) (Max)	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Reverse Recovery Time (trr)	Package / Case	Package Name	Voltage - DC Reverse (Vr) (Max)
EIC Semiconductor 1N4937T/R	15 pF	500 ns	200 mA	Standard	1.2 V	1 A	Through Hole	5 µA	150 °C	-65 °C	150 ns	Axial DO-204AL DO-41	DO-41	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	10000	$ 0.04	1m+
	Tape & Reel (TR)	5000	$ 0.04	1m+

3D models and CAD resources for this part

General part information

Diode 600 V 1A Through Hole DO-41

Technical documentation and resources