Discrete Semiconductor Products

1N4937T/R

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DIODE GEN PURP 600V 1A DO41

Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	1N4937T/R

Capacitance	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-65 °C
Package / Case	Axial, DO-204AL, DO-41
Package Name	DO-41
Reverse Recovery Time (trr)	150 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	600 V
Voltage - Forward (Vf) (Max)	1.2 V

Part	Capacitance	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Technology	Voltage - Forward (Vf) (Max)	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Reverse Recovery Time (trr)	Package / Case	Package Name	Voltage - DC Reverse (Vr) (Max)
EIC Semiconductor 1N4937T/R	15 pF	500 ns	200 mA	Standard	1.2 V	1 A	Through Hole	5 µA	150 °C	-65 °C	150 ns	Axial DO-204AL DO-41	DO-41	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Tape & Reel (TR)	5000	$ 0.04	<4d

3D models and CAD resources for this part

General part information

Diode 600 V 1A Through Hole DO-41

Technical documentation and resources