Optoelectronics
VSMY98525DS
NRNDVishay General Semiconductor - Diodes Division
850 NM,HIGH POWER INFRARED EMITTING
Deep-Dive with AI
Search across all available documentation for this part.
Optoelectronics
VSMY98525DS
NRNDVishay General Semiconductor - Diodes Division
850 NM,HIGH POWER INFRARED EMITTING
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | VSMY98525DS |
|---|---|
| Current - DC Forward (If) (Max) | 1 A |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Orientation | Top View |
| Package / Case | 3-SMD, No Lead |
| Radiant Intensity (Ie) Min @ If [Min] | 800 mW/sr |
| Type | Infrared (IR) |
| Viewing Angle | 50 ° |
| Voltage - Forward (Vf) (Typ) | 3.1 V |
| Wavelength | 850 nm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 6.70 | |
| 10 | $ 4.74 | |||
| 100 | $ 3.88 | |||
| Digi-Reel® | 1 | $ 6.70 | ||
| 10 | $ 4.74 | |||
| 100 | $ 3.88 | |||
| Tape & Reel (TR) | 600 | $ 2.79 | ||
Description
General part information
MY98525 Series
Infrared (IR) Emitter 850nm 3.1V 1A 800mW/sr @ 1A 50° 3-SMD, No Lead
Documents
Technical documentation and resources
No documents available