FCD260N65S3
NRNDPOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 12 A, 260 MΩ, DPAK
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FCD260N65S3
NRNDPOWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 12 A, 260 MΩ, DPAK
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Technical Specifications
Parameters and characteristics for this part
| Specification | FCD260N65S3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 90 W |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.34 | |
| 10 | $ 2.18 | |||
| 100 | $ 1.52 | |||
| 500 | $ 1.24 | |||
| 1000 | $ 1.15 | |||
| Digi-Reel® | 1 | $ 3.34 | ||
| 10 | $ 2.18 | |||
| 100 | $ 1.52 | |||
| 500 | $ 1.24 | |||
| 1000 | $ 1.15 | |||
| Tape & Reel (TR) | 2500 | $ 1.10 | ||
| Newark | Each (Supplied on Full Reel) | 1 | $ 0.97 | |
| 3000 | $ 0.92 | |||
| 6000 | $ 0.87 | |||
| 12000 | $ 0.78 | |||
| 18000 | $ 0.75 | |||
| 30000 | $ 0.72 | |||
| ON Semiconductor | N/A | 1 | $ 0.61 | |
Description
General part information
FCD260N65S3 Series
SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Documents
Technical documentation and resources