Discrete Semiconductor Products

SIB441EDK-T1-GE3

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MOSFET P-CH 12V 9A PPAK SC75-6

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Discrete Semiconductor Products

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MOSFET P-CH 12V 9A PPAK SC75-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIB441EDK-T1-GE3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	33 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-75-6
Power Dissipation (Max)	13 W, 2.4 W
Rds On (Max) @ Id, Vgs	25.5 mOhm
Supplier Device Package	PowerPAK® SC-75-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Mounting Type	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIB441EDK-T1-GE3	PowerPAK® SC-75-6	9 A	-55 °C	150 °C	12 V	900 mV	25.5 mOhm	MOSFET (Metal Oxide)	2.4 W 13 W	Surface Mount	8 V	P-Channel	1.5 V 4.5 V	33 nC	PowerPAK® SC-75-6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 12 V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Technical documentation and resources