Discrete Semiconductor Products

KST2907AMTF

Obsolete

PNP EPITAXIAL SILICON TRANSISTOR

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Discrete Semiconductor Products

Obsolete

PNP EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KST2907AMTF

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	350 mW
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max)	60 V

PNP Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Package / Case	Transistor Type
ON Semiconductor KST2907AMTF	0.01 µA	350 mW	1.6 V	600 mA	200 MHz	SOT-23-3	60 V	100	Surface Mount	SC-59 SOT-23-3 TO-236-3	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$