Specification	SSM3K324R,LF

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	190 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V

SSM3K324R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 4.0 A, 0.056 Ω@4.5V, SOT-23F

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Toshiba Semiconductor and Storage SSM3K324R,LF	SOT-23F	4 A	12 V	30 V	150 °C	190 pF	MOSFET (Metal Oxide)	Surface Mount	N-Channel	1.8 V	4.5 V	SOT-23-3 Flat Leads	55 mOhm	1 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 4.0 A, 0.056 Ω@4.5V, SOT-23F

Technical documentation and resources