Discrete Semiconductor Products

SCS112AGC

Obsolete

DIODE SIL CARB 600V 12A TO220AC

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 600V 12A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SCS112AGC

Capacitance @ Vr, F	516 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	240 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Technology	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Supplier Device Package	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr
Rohm Semiconductor SCS112AGC	500 mA	1.7 V	12 A	SiC (Silicon Carbide) Schottky	0 ns	516 pF	175 ░C	TO-220AC	Through Hole	600 V	TO-220-2	240 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 5.86

General part information

Diode 600 V 12A Through Hole TO-220AC

Technical documentation and resources