Discrete Semiconductor Products

BUK653R2-55C,127

Obsolete

Freescale Semiconductor - NXP

MOSFET N-CH 55V 120A TO220AB

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Discrete Semiconductor Products

BUK653R2-55C,127

Obsolete

Freescale Semiconductor - NXP

MOSFET N-CH 55V 120A TO220AB

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BUK653R2-55C,127

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	258 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	15300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	306 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id [Max]	2.8 V

BUK65 Series

Part	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Grade
Freescale Semiconductor - NXP BUK652R0-30C,127	MOSFET (Metal Oxide)	30 V	120 A	Through Hole	306 W	TO-220AB	2.8 V	N-Channel	229 nC	4.5 V 10 V	TO-220-3	-55 °C	175 ░C	2.2 mOhm	14964 pF	16 V
Freescale Semiconductor - NXP BUK6507-55C,127	MOSFET (Metal Oxide)	55 V	100 A	Through Hole		TO-220AB	2.8 V	N-Channel		4.5 V 10 V	TO-220-3	-55 °C	175 ░C	7 mOhm	5160 pF	16 V	82 nC	158 W
Freescale Semiconductor - NXP BUK652R7-30C,127	MOSFET (Metal Oxide)	30 V	100 A	Through Hole		TO-220AB	2.8 V	N-Channel		4.5 V 10 V	TO-220-3	-55 °C	175 ░C	3.3 mOhm	6960 pF	16 V	114 nC	204 W
Freescale Semiconductor - NXP BUK653R7-30C,127	MOSFET (Metal Oxide)	30 V	100 A	Through Hole		TO-220AB	2.8 V	N-Channel		4.5 V 10 V	TO-220-3	-55 °C	175 ░C	3.9 mOhm	4707 pF	16 V	78 nC	158 W
Freescale Semiconductor - NXP BUK653R4-40C,127	MOSFET (Metal Oxide)	40 V	100 A	Through Hole		TO-220AB	2.8 V	N-Channel	125 nC	4.5 V 10 V	TO-220-3	-55 °C	175 ░C	3.6 mOhm	8020 pF	16 V		204 W
Freescale Semiconductor - NXP BUK653R2-55C,127	MOSFET (Metal Oxide)	55 V	120 A	Through Hole	306 W	TO-220AB	2.8 V	N-Channel	258 nC	4.5 V 10 V	TO-220-3	-55 °C	175 ░C	3.2 mOhm		16 V			15300 pF
Freescale Semiconductor - NXP BUK654R8-40C,127	MOSFET (Metal Oxide)	40 V	100 A	Through Hole		TO-220AB	2.8 V	N-Channel	88 nC	4.5 V 10 V	TO-220-3	-55 °C	175 ░C	4.8 mOhm	5200 pF	16 V		158 W		AEC-Q101	Automotive
Freescale Semiconductor - NXP BUK654R6-55C,127	MOSFET (Metal Oxide)	55 V	100 A	Through Hole		TO-220AB	2.8 V	N-Channel		4.5 V 10 V	TO-220-3	-55 °C	175 ░C	5.4 mOhm	7750 pF	16 V	124 nC	204 W
Freescale Semiconductor - NXP BUK652R3-40C,127	MOSFET (Metal Oxide)	40 V	120 A	Through Hole	306 W	TO-220AB	2.8 V	N-Channel	260 nC	4.5 V 10 V	TO-220-3	-55 °C	175 ░C	2.3 mOhm	15100 pF	16 V
Freescale Semiconductor - NXP BUK652R1-30C,127	MOSFET (Metal Oxide)	30 V	120 A	Through Hole	263 W	TO-220AB	2.8 V	N-Channel	168 nC	4.5 V 10 V	TO-220-3	-55 °C	175 ░C	2.4 mOhm	10918 pF	16 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BUK65 Series

N-Channel 55 V 120A (Tc) 306W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources

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