Discrete Semiconductor Products

ATP304-TL-H

Active

POWER MOSFET, P CHANNEL, 60 V, 100 A, 0.005 OHM, ATPAK, SURFACE MOUNT

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

POWER MOSFET, P CHANNEL, 60 V, 100 A, 0.005 OHM, ATPAK, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	ATP304-TL-H

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	13000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	ATPAK (2 leads+tab)
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	ATPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

P-Channel Power MOSFET -60V, -100A, 6.5mΩ

Part	FET Type	Operating Temperature	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
ON Semiconductor ATP304-TL-H	P-Channel	150 °C	MOSFET (Metal Oxide)	Surface Mount	6.5 mOhm	ATPAK (2 leads+tab)	ATPAK	100 A	13000 pF	20 V	90 W	4.5 V 10 V	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

ATP304 is P-Channel Power MOSFET -60V, -100A, 6.5 mΩ, ATPAK

Technical documentation and resources