Discrete Semiconductor Products

SI2312HE3-TP

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Discrete Semiconductor Products

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INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	SI2312HE3-TP

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	865 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	350 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	31.8 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Grade	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Qualification	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Micro Commercial Components SI2312HE3-TP	20 V	1.8 V 4.5 V	Surface Mount	-55 °C	150 °C	350 mW	MOSFET (Metal Oxide)	8 V	31.8 mOhm	Automotive	N-Channel	5 A	SOT-23	1 V	AEC-Q101	SC-59 SOT-23-3 TO-236-3	865 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3000	$ 0.10

General part information

N-Channel 20 V 5A 350mW Surface Mount SOT-23

Technical documentation and resources