Discrete Semiconductor Products

PHP63NQ03LT,127

Obsolete

MOSFET N-CH 30V 68.9A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 68.9A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP63NQ03LT,127

Current - Continuous Drain (Id) (Tc)	68.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	9.6 nC
Input Capacitance (Ciss) (Max)	920 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	111 W
Rds On (Max)	13 mOhm, 13 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Rds On (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Package Name	Power Dissipation (Max)	Technology	Gate Charge (Max)	Drain to Source Voltage (Vdss)
NXP USA Inc. PHP63NQ03LT,127	13 mOhm 13 mOhm	2.5 V	68.9 A	-55 °C	175 °C	20 V	Through Hole	920 pF	TO-220-3	10 V	5 V	N-Channel	TO-220AB	111 W	MOSFET (Metal Oxide)	9.6 nC	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 68.9A (Tc) 111W (Tc) Through Hole TO-220AB

Technical documentation and resources

No documents available