Discrete Semiconductor Products

PHP63NQ03LT,127

Obsolete

MOSFET N-CH 30V 68.9A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 68.9A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP63NQ03LT,127

Current - Continuous Drain (Id) @ 25°C	68.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.6 nC
Input Capacitance (Ciss) (Max) @ Vds	920 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	111 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Package / Case	Supplier Device Package	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type
Freescale Semiconductor - NXP PHP63NQ03LT,127	TO-220-3	TO-220AB	MOSFET (Metal Oxide)	Through Hole	9.6 nC	30 V	2.5 V	920 pF	-55 °C	175 ░C	111 W	10 V	5 V	13 mOhm	68.9 A	20 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 68.9A (Tc) 111W (Tc) Through Hole TO-220AB

Technical documentation and resources

No documents available