Discrete Semiconductor Products

IXTT2N300P3HV

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 3 KV, 2 A, 21 OHM, TO-268HV, SURFACE MOUNT

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsProduct Change Notice EN

Discrete Semiconductor Products

IXTT2N300P3HV

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, N CHANNEL, 3 KV, 2 A, 21 OHM, TO-268HV, SURFACE MOUNT

Deep-Dive with AI

DocumentsProduct Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTT2N300P3HV

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	3000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	73 nC
Input Capacitance (Ciss) (Max) @ Vds	1890 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	155 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max) [Max]	520 W
Rds On (Max) @ Id, Vgs	21 Ohm
Supplier Device Package	TO-268HV (IXTT)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

IXTT2N300P3HV Series

Disc Mosfet N-CH Std-Polar3 TO-268AA

Part	Gate Charge (Qg) (Max) @ Vgs [x]	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
Littelfuse/Commercial Vehicle Products IXTT2N300P3HV	73 nC	MOSFET (Metal Oxide)	Surface Mount	1890 pF	2 A	-55 °C	155 °C	20 V	21 Ohm	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	N-Channel	5 V	3000 V	520 W	10 V	TO-268HV (IXTT)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 49.80
		30	$ 41.73
		120	$ 38.95

Description

General part information

IXTT2N300P3HV Series

Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet