Discrete Semiconductor Products

1N5818-E3/54

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DIODE SCHOTTKY 30V 1A DO204AL

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Discrete Semiconductor Products

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DIODE SCHOTTKY 30V 1A DO204AL

Technical Specifications

Parameters and characteristics for this part

Specification	1N5818-E3/54

Capacitance @ Vr, F	110 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, Axial, DO-41
Speed	500 ns, 200 mA
Supplier Device Package	DO-204AL (DO-41)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	550 mV

1.0A Schottky Barrier Rectifier

Part	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division 1N5818-E3/53	1 mA	110 pF	30 V	Schottky	1 A	-65 C	125 °C	200 mA 500 ns	Axial DO-204AL DO-41	DO-204AL (DO-41)	875 mV	Through Hole
Vishay General Semiconductor - Diodes Division 1N5818-E3/54	1 mA	110 pF	30 V	Schottky	1 A	-65 C	125 °C	200 mA 500 ns	Axial DO-204AL DO-41	DO-204AL (DO-41)		Through Hole	550 mV
Vishay General Semiconductor - Diodes Division VS-1N5818	1 mA		30 V	Schottky	1 A	-65 C	125 °C	200 mA 500 ns	Axial DO-204AL DO-41	DO-204AL (DO-41)		Through Hole	550 mV
Vishay General Semiconductor - Diodes Division 1N5818-E3/1	1 mA		30 V	Schottky	1 A	-65 C	125 °C	200 mA 500 ns	Axial DO-204AL DO-41	DO-204AL (DO-41)		Through Hole	550 mV
Vishay General Semiconductor - Diodes Division 1N5818-E3/73	1 mA		30 V	Schottky	1 A	-65 C	125 °C	200 mA 500 ns	Axial DO-204AL DO-41	DO-204AL (DO-41)		Through Hole	550 mV

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General part information

1.0A Schottky Barrier Rectifier

Technical documentation and resources