Discrete Semiconductor Products

SIZ250DT-T1-GE3

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MOSFET 2N-CH 60V 14A 8PWRPAIR

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 14A 8PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ250DT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	38 A, 14 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	790 pF, 840 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	4.3 W, 33 W
Rds On (Max) @ Id, Vgs [Max]	12.7 mOhm
Rds On (Max) @ Id, Vgs [Min]	12.2 mOhm
Supplier Device Package	8-PowerPair® (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Rds On (Max) @ Id, Vgs [Min]	Power - Max	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIZ250DT-T1-GE3	8-PowerWDFN	-55 °C	150 °C	2.4 V	60 V	8-PowerPair® (3.3x3.3)	MOSFET (Metal Oxide)	21 nC	12.7 mOhm	12.2 mOhm	4.3 W 33 W	790 pF 840 pF	2 N-Channel (Dual)	Surface Mount	14 A 38 A

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General part information

Mosfet Array 60V 14A (Ta), 38A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair® (3.3x3.3)

Technical documentation and resources