Specification	MPSW55G

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	500 nA
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	1 W
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

MPSW55 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Supplier Device Package	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Transistor Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Package / Case
ON Semiconductor MPSW55	-55 °C	150 °C	500 nA	60 V	TO-92	TO-226	50 MHz	500 mA	PNP	1 W	500 mV	Through Hole	TO-226-3 TO-92-3 Long Body
ON Semiconductor MPSW55G	-55 °C	150 °C	500 nA	60 V	TO-92	TO-226	50 MHz	500 mA	PNP	1 W	500 mV	Through Hole	TO-226-3 TO-92-3 Long Body
ON Semiconductor MPSW55RLRAG	-55 °C	150 °C	500 nA	60 V	TO-92	TO-226	50 MHz	500 mA	PNP	1 W	500 mV	Through Hole	Formed Leads TO-226-3 TO-92-3 Long Body

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MPSW55 Series

The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.