Discrete Semiconductor Products

SVM1060XB_R2_00001

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DIODE SCHOTTKY 60V 10A 3-PIN TO-277B T/R

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Discrete Semiconductor Products

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DIODE SCHOTTKY 60V 10A 3-PIN TO-277B T/R

Technical Specifications

Parameters and characteristics for this part

Specification	SVM1060XB_R2_00001

Capacitance @ Vr, F	850 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	360 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-277, 3-PowerDFN
Speed	500 ns, 200 mA
Supplier Device Package	TO-277B
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V

Part	Package / Case	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Speed	Capacitance @ Vr, F
Panjit International Inc. SVM1060UB_R2_00001	TO-277 3-PowerDFN	Schottky	220 µA	60 V	Surface Mount	TO-277B	-55 °C	150 °C	520 mV	10 A	200 mA 500 ns
Panjit International Inc. SVM1060X_R1_00001	TO-277 3-PowerDFN	Schottky	360 µA	60 V	Surface Mount	TO-277	-55 °C	150 °C		10 A	200 mA 500 ns	850 pF
Panjit International Inc. SVM1060XB_R2_00001	TO-277 3-PowerDFN	Schottky	360 µA	60 V	Surface Mount	TO-277B	-55 °C	150 °C		10 A	200 mA 500 ns	850 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 60 V 10A Surface Mount TO-277B

Technical documentation and resources

No documents available