Specification	CSD18535KTT

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	81 nC
Input Capacitance (Ciss) (Max) @ Vds	6620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263AA, D2PAK (3 Leads + Tab), TO-263-4
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	2 mOhm
Supplier Device Package	TO-263 (DDPAK-3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

CSD18535KCS Series

60-V, N channel NexFET™ power MOSFET, single TO-220, 2 mOhm

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Vgs (Max)
Texas Instruments CSD18535KCS	2 mOhm	2.4 V	MOSFET (Metal Oxide)	4.5 V 10 V	TO-220-3	60 V	Through Hole	-55 °C	175 ░C	200 A	81 nC	6620 pF	300 W	TO-220-3	N-Channel	20 V
Texas Instruments CSD18535KTT	2 mOhm	2.4 V	MOSFET (Metal Oxide)	4.5 V 10 V	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	60 V	Surface Mount	-55 °C	175 ░C	200 A	81 nC	6620 pF	300 W	TO-263 (DDPAK-3)	N-Channel	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 60-V, 1.6-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources