Discrete Semiconductor Products

SICRD101200

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DIODE SIL CARBIDE 1.2KV 10A DPAK

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 1.2KV 10A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SICRD101200

Capacitance @ Vr, F	640 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Mounting Type	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case
SMC Diode Solutions SICRD101200	1.2 kV	500 mA	SiC (Silicon Carbide) Schottky	1.8 V	10 A	0 ns	640 pF	Surface Mount	DPAK	100 µA	175 ░C	-55 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3

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General part information

Diode 1200 V 10A Surface Mount DPAK

Technical documentation and resources