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TO-220AB
Discrete Semiconductor Products

UG10DCT-E3/45

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TO-220AB
Discrete Semiconductor Products

UG10DCT-E3/45

Active

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationUG10DCT-E3/45
Current - Average Rectified (Io) (per Diode)5 A
Current - Reverse Leakage @ Vr10 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseTO-220-3
Reverse Recovery Time (trr)25 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220-3
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.08
10$ 0.88
100$ 0.69
500$ 0.58
1000$ 0.47
2000$ 0.45
5000$ 0.43
10000$ 0.41

Description

General part information

UG10 Series

Diode Array 1 Pair Common Cathode 200 V 5A Through Hole TO-220-3

Documents

Technical documentation and resources