Discrete Semiconductor Products

NTMS4802NR2G

Obsolete

SINGLE N-CHANNEL POWER MOSFET 30V, 18A, 4MΩ

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Discrete Semiconductor Products

Obsolete

SINGLE N-CHANNEL POWER MOSFET 30V, 18A, 4MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NTMS4802NR2G

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	36 nC
Input Capacitance (Ciss) (Max) @ Vds	5300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	910 mW
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Single N-Channel Power MOSFET 30V, 18A, 4mΩ

Part	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor NTMS4802NR2G	MOSFET (Metal Oxide)	8-SOIC	4.5 V 10 V	2.5 V	N-Channel	Surface Mount	20 V	30 V	5300 pF	36 nC	4 mOhm	-55 °C	150 °C	910 mW	8-SOIC	3.9 mm	0.154 in

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 30V 18A 4 mOhm Single N-Channel SO-8

Technical documentation and resources