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SOT-363
Discrete Semiconductor Products

SBC846BDW1T1G-M01

Obsolete
ON Semiconductor

SBC846BDW1T1G-M01

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SOT-363
Discrete Semiconductor Products

SBC846BDW1T1G-M01

Obsolete
ON Semiconductor

SBC846BDW1T1G-M01

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSBC846BDW1T1G-M01
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]380 mW
QualificationAEC-Q101
Supplier Device PackageSC70-6, SC-88, SOT-363
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]65 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

BC846BPDW1 Series

The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.

Documents

Technical documentation and resources

No documents available