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onsemi-2N6520RLRAG GP BJT Trans GP BJT PNP 350V 0.5A 625mW 3-Pin TO-92 T/R
Discrete Semiconductor Products

2N3904TA

Active
ON Semiconductor

200 MA, 40 V NPN GENERAL PURPOSE BIPOLAR JUNCTION TRANSISTOR

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENPackage Drawing-135AR-TO-92 3 4.83x4.76 Leadformed+1
onsemi-2N6520RLRAG GP BJT Trans GP BJT PNP 350V 0.5A 625mW 3-Pin TO-92 T/R
Discrete Semiconductor Products

2N3904TA

Active
ON Semiconductor

200 MA, 40 V NPN GENERAL PURPOSE BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

DocumentsTechnical Data Sheet ENPackage Drawing-135AR-TO-92 3 4.83x4.76 Leadformed+1

Technical Specifications

Parameters and characteristics for this part

Specification2N3904TA
Current - Collector (Ic) (Max) [Max]200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition300 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-226-3, TO-92-3
Power - Max [Max]625 mW
Supplier Device PackageTO-92-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

2N3904T Series

200 mA, 40 V NPN General Purpose Bipolar Junction Transistor

PartMounting TypeCurrent - Collector (Ic) (Max) [Max]Transistor TypePower - Max [Max]Package / CaseVoltage - Collector Emitter Breakdown (Max) [Max]Operating Temperature [Min]Operating Temperature [Max]Vce Saturation (Max) @ Ib, IcSupplier Device PackageSupplier Device PackageFrequency - TransitionDC Current Gain (hFE) (Min) @ Ic, Vce [Min]
TO-92-3 Formed Leads
ON Semiconductor
2N3904RL1
Through Hole
200 mA
NPN
625 mW
Formed Leads
TO-226-3
TO-92-3 Long Body
40 V
-55 °C
150 °C
300 mV
TO-92
TO-226
300 MHz
100
TO-92-3(StandardBody),TO-226_straightlead
ON Semiconductor
2N3904NLBU
Through Hole
200 mA
NPN
625 mW
TO-226-3
TO-92-3
40 V
-55 °C
150 °C
300 mV
TO-92-3
300 MHz
100
TO-92-3(StandardBody),TO-226_straightlead
ON Semiconductor
2N3904G
Through Hole
200 mA
NPN
625 mW
TO-226-3
TO-92-3 Long Body
40 V
-55 °C
150 °C
300 mV
TO-92
TO-226
300 MHz
100
TO-92-3 Formed Leads
ON Semiconductor
2N3904_D28Z
Through Hole
200 mA
NPN
625 mW
TO-226-3
TO-92-3
40 V
-55 °C
150 °C
300 mV
TO-92-3
300 MHz
100
TO-92-3 Formed Leads
ON Semiconductor
2N3904_J61Z
Through Hole
200 mA
NPN
625 mW
TO-226-3
TO-92-3
40 V
-55 °C
150 °C
300 mV
TO-92-3
300 MHz
100
TO-92-3 Formed Leads
ON Semiconductor
2N3904_D81Z
Through Hole
200 mA
NPN
625 mW
TO-226-3
TO-92-3
40 V
-55 °C
150 °C
300 mV
TO-92-3
300 MHz
100
TO-92-3(StandardBody),TO-226_straightlead
ON Semiconductor
2N3904_J25Z
Through Hole
200 mA
NPN
625 mW
TO-226-3
TO-92-3
40 V
-55 °C
150 °C
300 mV
TO-92-3
300 MHz
100
TO-92-3 Formed Leads
ON Semiconductor
2N3904_D27ZS00Z
Through Hole
200 mA
NPN
625 mW
TO-226-3
TO-92-3
40 V
-55 °C
150 °C
300 mV
TO-92-3
300 MHz
100
onsemi-2N6520RLRAG GP BJT Trans GP BJT PNP 350V 0.5A 625mW 3-Pin TO-92 T/R
ON Semiconductor
2N3904TA
Through Hole
200 mA
NPN
625 mW
TO-226-3
TO-92-3
40 V
-55 °C
150 °C
300 mV
TO-92-3
300 MHz
100
TO-92-3 Formed Leads
ON Semiconductor
2N3904_D10Z
Through Hole
200 mA
NPN
625 mW
TO-226-3
TO-92-3
40 V
-55 °C
150 °C
300 mV
TO-92-3
300 MHz
100

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 0.19
10$ 0.12
25$ 0.12
100$ 0.06
250$ 0.06
500$ 0.05
1000$ 0.05
3000$ 0.04
6000$ 0.04
15000$ 0.04
DigikeyCut Tape (CT) 1$ 0.27
10$ 0.16
100$ 0.10
500$ 0.07
1000$ 0.07
Tape & Box (TB) 2000$ 0.06
4000$ 0.05
6000$ 0.05
10000$ 0.05
14000$ 0.04
20000$ 0.04
50000$ 0.04
100000$ 0.03
200000$ 0.03
NewarkEach 1000$ 0.04
2500$ 0.03
10000$ 0.03
25000$ 0.03
ON SemiconductorN/A 1$ 0.03

Description

General part information

2N3904T Series

This 200 mA, 40 V NPN General Purpose Bipolar Junction Transistor can be used as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.