Discrete Semiconductor Products

SIC05120B-BP

LTB

DIODE SIL CARB 1.2KV 5A TO220AC

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Discrete Semiconductor Products

LTB

DIODE SIL CARB 1.2KV 5A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIC05120B-BP

Capacitance @ Vr, F	353 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	3 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology	Capacitance @ Vr, F	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package
Micro Commercial Components SIC05120B-BP	Through Hole	3 µA	TO-220-2	175 ░C	-55 C	1.7 V	5 A	SiC (Silicon Carbide) Schottky	353 pF	No Recovery Time	1.2 kV	TO-220AC

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General part information

Diode 1200 V 5A Through Hole TO-220AC

Technical documentation and resources