Specification	SSM3J351R,LXHF

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	660 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	134 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	2 V

SSM3J351R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -60 V, -3.5 A, 0.134 Ω@10V, SOT-23F

Part	Power Dissipation (Max)	Operating Temperature	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Grade	Qualification
Toshiba Semiconductor and Storage SSM3J351R,LF	2 W	150 °C	10 V	-20 V	4 V	10 V	P-Channel	134 mOhm	SOT-23F	MOSFET (Metal Oxide)	60 V	2 V	3.5 A	15.1 nC	Surface Mount	SOT-23-3 Flat Leads	660 pF
Toshiba Semiconductor and Storage SSM3J351R,LXHF	1 W	150 °C	10 V	-20 V	4 V	10 V	P-Channel	134 mOhm	SOT-23F	MOSFET (Metal Oxide)	60 V	2 V	3.5 A	15.1 nC	Surface Mount	SOT-23-3 Flat Leads	660 pF	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -60 V, -3.5 A, 0.134 Ω@10V, SOT-23F

Technical documentation and resources