Discrete Semiconductor Products

UPA2737GR-E1-AT

Obsolete

PCH POWER MOSFET -30V -11A 13MOHM SOP-8 / SOIC-8

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Discrete Semiconductor Products

Obsolete

PCH POWER MOSFET -30V -11A 13MOHM SOP-8 / SOIC-8

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2737GR-E1-AT

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1750 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.173 in
Package / Case	4.4 mm
Package / Case	8-SOIC
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Pch Power MOSFET -30V -11A 13mohm SOP-8 / SOIC-8

Part	Power Dissipation (Max)	Operating Temperature	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Package / Case	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)
Renesas Electronics Corporation UPA2737GR-E1-AT	1.1 W	150 °C	13 mOhm	P-Channel	0.173 in	4.4 mm	8-SOIC	8-SOP	1750 pF	45 nC	11 A	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	30 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources