Discrete Semiconductor Products

UPA2737GR-E1-AT

Obsolete

PCH POWER MOSFET -30V -11A 13MOHM SOP-8 / SOIC-8

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Discrete Semiconductor Products

Obsolete

PCH POWER MOSFET -30V -11A 13MOHM SOP-8 / SOIC-8

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2737GR-E1-AT

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1750 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC (0.173", 4.40mm Width)
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Pch Power MOSFET -30V -11A 13mohm SOP-8 / SOIC-8

Part	Operating Temperature	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case
Renesas Electronics Corporation UPA2737GR-E1-AT	150 °C	8-SOIC (0.173" 4.40mm Width)	13 mOhm	MOSFET (Metal Oxide)	45 nC	20 V	P-Channel	8-SOP	1.1 W	Surface Mount	1750 pF	4.5 V 10 V	30 V	11 A
Renesas Electronics Corporation UPA2737GR-E1-AX	150 °C	8-SOIC	13 mOhm	MOSFET (Metal Oxide)	45 nC	20 V	P-Channel	8-SOP	2.5 W	Surface Mount	1750 pF	4.5 V 10 V	30 V	11 A	0.154 in	3.9 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources