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Technical Specifications
Parameters and characteristics for this part
| Specification | QH8KA4TCR |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Power - Max [Max] | 1.5 W |
| Rds On (Max) @ Id, Vgs | 17 mOhm |
| Supplier Device Package | TSMT8 |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
QH8KA4 Series
The Middle Power MOSFET QH8KA4 is suitable for switching and battery applications.
Documents
Technical documentation and resources