Discrete Semiconductor Products

NTHS5404T1G

Obsolete

SINGLE N-CHANNEL CHIPFET™ POWER MOSFET 20V 7.2A 30MΩ

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Discrete Semiconductor Products

Obsolete

SINGLE N-CHANNEL CHIPFET™ POWER MOSFET 20V 7.2A 30MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NTHS5404T1G

Current - Continuous Drain (Id) @ 25°C	5.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	600 mV

Single N-Channel ChipFET™ Power MOSFET 20V 7.2A 30mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package
ON Semiconductor NTHS5404T1G	-55 °C	150 °C	30 mOhm	18 nC	Surface Mount	12 V	600 mV	MOSFET (Metal Oxide)	N-Channel	2.5 V 4.5 V	5.2 A	20 V	1.3 W	ChipFET™

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 20 V, 7.2 A, N-Channel ChipFET™

Technical documentation and resources