Discrete Semiconductor Products

1N1187R

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DIODE GEN PURP REV 300V 35A DO5

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Discrete Semiconductor Products

Active

DIODE GEN PURP REV 300V 35A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N1187R

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	190 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-5, DO-203AB
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-5
Technology	Reverse Polarity, Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Technology	Speed [Min]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
GeneSiC Semiconductor 1N1187R	300 V	Chassis Stud Mount	DO-203AB DO-5 Stud	Reverse Polarity Standard	200 mA 500 ns	10 µA	35 A	DO-5	190 °C	-65 C

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General part information

Diode 300 V 35A Chassis, Stud Mount DO-5

Technical documentation and resources