Specification	NSTB60BDW1T1

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80, 120 hFE
Frequency - Transition	140 MHz
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SC70-6, SC-88, SOT-363
Transistor Type	1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

NSTB60 Series

PNP General Purpose and NPN Bias Resistor Transistor Combination

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	Resistor - Emitter Base (R2)	Package / Case	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Supplier Device Package
ON Semiconductor NSTB60BDW1T1	1 NPN Pre-Biased 1 PNP	80 120 hFE	50 V	140 MHz	500 nA	Surface Mount	250 mV	500 mV	22 kOhms	47000 Ohms	6-TSSOP SC-88 SOT-363	150 mA	250 mW	SC-88 SC70-6 SOT-363

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

PNP General Purpose and NPN Bias Resistor Transistor Combination

Technical documentation and resources