Discrete Semiconductor Products

MMBTH10-TP

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RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.05A I(C), 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, NPN, ROHS COMPLIANT, PLASTIC PACKAGE-3

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Discrete Semiconductor Products

Active

RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.05A I(C), 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, NPN, ROHS COMPLIANT, PLASTIC PACKAGE-3

Technical Specifications

Parameters and characteristics for this part

Specification	MMBTH10-TP

Current - Collector (Ic) (Max) [Max]	50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	650 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	225 mW
Supplier Device Package	SOT-23
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25 V

Part	Power - Max [Max]	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Package / Case
Micro Commercial Components MMBTH10-TP	225 mW	NPN	-55 °C	150 °C	60	650 MHz	Surface Mount	SOT-23	50 mA	25 V	SC-59 SOT-23-3 TO-236-3

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General part information

RF Transistor NPN 25V 50mA 650MHz 225mW Surface Mount SOT-23

Technical documentation and resources