Discrete Semiconductor Products

1SS193S,LF(D

Obsolete

DIODE GEN PURP 80V 100MA S-MINI

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 80V 100MA S-MINI

Technical Specifications

Parameters and characteristics for this part

Specification	1SS193S,LF(D

Capacitance	3 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage	500 nA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	125 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	S-Mini
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed, Small Signal
Speed - Fast Recovery (Maximum)	200 mA
Speed - Small Signal Current Max	200 mA, 200 mA, 200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	80 V
Voltage - Forward (Vf) (Max)	1.2 V

Diodes, 80 V/0.1 A Switching diode, SOT-346(S-Mini)

Part	Package / Case	Package Name	Capacitance	Technology	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max)	Reverse Recovery Time (trr)	Speed - Small Signal Current Max	Speed	Speed - Fast Recovery (Maximum)	Current - Reverse Leakage	Mounting Type	Operating Temperature - Junction (Max)	Voltage - Forward (Vf) (Max)
Toshiba Semiconductor and Storage 1SS193,LF	SC-59 SOT-23-3 TO-236-3	S-Mini	3 pF	Standard	100 mA	80 V	4 ns	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	500 nA	Surface Mount	125 °C	1.2 V
Toshiba Semiconductor and Storage 1SS193S,LF(D	SC-59 SOT-23-3 TO-236-3	S-Mini	3 pF	Standard	100 mA	80 V	4 ns	200 mA 200 mA 200 mA	Any Speed Small Signal	200 mA	500 nA	Surface Mount	125 °C	1.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Diodes, 80 V/0.1 A Switching diode, SOT-346(S-Mini)

Technical documentation and resources

No documents available