Discrete Semiconductor Products

HN1C03F-B(TE85L,F)

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BIPOLAR TRANS, DUAL NPN, 20V, SOT-26 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

BIPOLAR TRANS, DUAL NPN, 20V, SOT-26 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	HN1C03F-B(TE85L,F)

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	350
Frequency - Transition	30 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-457, SC-74
Power - Max [Max]	300 mW
Supplier Device Package	SM6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	100 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	20 V

Part	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Operating Temperature	Mounting Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]
Toshiba Semiconductor and Storage HN1C03FU-A(TE85L,F	2 NPN (Dual)	20 V	100 mV	300 mA	30 MHz	150 °C	Surface Mount	US6	100 nA	6-TSSOP SC-88 SOT-363	200	200 mW
Toshiba Semiconductor and Storage HN1C03F-B(TE85L,F)	2 NPN (Dual)	20 V	100 mV	300 mA	30 MHz	150 °C	Surface Mount	SM6	100 nA	SC-74 SOT-457	350	300 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 300mA 30MHz 300mW Surface Mount SM6

Technical documentation and resources