Discrete Semiconductor Products

SQ3410EV-T1_GE3

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MOSFET N-CH 30V 8A 6TSOP

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Discrete Semiconductor Products

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MOSFET N-CH 30V 8A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SQ3410EV-T1_GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	1005 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	5 W
Rds On (Max) @ Id, Vgs [Max]	17.5 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SQ3410EV-T1_GE3	8 A	-55 °C	175 ░C	N-Channel	Surface Mount	5 W	6-TSOP	SOT-23-6 Thin TSOT-23-6	4.5 V 10 V	17.5 mOhm	2.5 V	20 V	30 V	MOSFET (Metal Oxide)	21 nC	1005 pF

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General part information

N-Channel 30 V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP

Technical documentation and resources