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TO-263
Discrete Semiconductor Products

FDB52N20TM

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 200 V, 52 A, 49 MILLIOHMS, TO-263 (D2PAK), 3 PINS, SURFACE MOUNT

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TO-263
Discrete Semiconductor Products

FDB52N20TM

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 200 V, 52 A, 49 MILLIOHMS, TO-263 (D2PAK), 3 PINS, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB52N20TM
Current - Continuous Drain (Id) @ 25°C52 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]63 nC
Input Capacitance (Ciss) (Max) @ Vds2900 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)357 W
Rds On (Max) @ Id, Vgs [Max]49 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.25
10$ 2.12
100$ 1.47
Digi-Reel® 1$ 3.25
10$ 2.12
100$ 1.47
Tape & Reel (TR) 800$ 1.13
1600$ 1.06
NewarkEach (Supplied on Full Reel) 1$ 1.42
3000$ 1.34
6000$ 1.27
12000$ 1.14
18000$ 1.10
30000$ 1.06
ON SemiconductorN/A 1$ 1.13

Description

General part information

FDB52N20 Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.