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ONSEMI NTJS4151PT1G.
Discrete Semiconductor Products

MBT3946DW1T2G

Active
ON Semiconductor

BIPOLAR TRANSISTOR ARRAY, COMPLEMENTARY NPN AND PNP, 40 V, 40 V, 200 MA, 200 MA, 150 MW

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ONSEMI NTJS4151PT1G.
Discrete Semiconductor Products

MBT3946DW1T2G

Active
ON Semiconductor

BIPOLAR TRANSISTOR ARRAY, COMPLEMENTARY NPN AND PNP, 40 V, 40 V, 200 MA, 200 MA, 150 MW

Technical Specifications

Parameters and characteristics for this part

SpecificationMBT3946DW1T2G
Current - Collector (Ic) (Max) [Max]200 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC70-6, SC-88, SOT-363
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic300 mV, 400 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.12
10$ 0.07
100$ 0.04
500$ 0.03
1000$ 0.03
Digi-Reel® 1$ 0.12
10$ 0.07
100$ 0.04
500$ 0.03
1000$ 0.03
Tape & Reel (TR) 3000$ 0.02
6000$ 0.02
9000$ 0.02
15000$ 0.02
21000$ 0.02
30000$ 0.02
NewarkEach (Supplied on Full Reel) 6000$ 0.03
18000$ 0.02
30000$ 0.02
ON SemiconductorN/A 1$ 0.02

Description

General part information

MBT3946DW1T1 Series

The NPN PNP Bipolar Transistor is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low power surface mount applications where board space is at a premium.