Discrete Semiconductor Products

RL256GP-TP

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DIODE GEN PURP 800V 2.5A R-3

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 2.5A R-3

Technical Specifications

Parameters and characteristics for this part

Specification	RL256GP-TP

Capacitance @ Vr, F	40 pF
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Axial, R-3
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	R-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Package / Case	Technology	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
Micro Commercial Components RL256-TP	Axial R-3	Standard	Standard Recovery >500ns	200 mA	150 °C	-55 °C	5 µA	R-3	1 V	Through Hole	35 pF	800 V
Micro Commercial Components RL256GP-AP	Axial R-3	Standard	Standard Recovery >500ns	200 mA	150 °C	-55 °C	5 µA	R-3		Through Hole	40 pF	800 V	1.1 V
Micro Commercial Components RL256M-TP	Axial DO-15 DO-204AC	Standard	Standard Recovery >500ns	200 mA	150 °C	-55 °C	5 µA	DO-15	1 V	Through Hole	35 pF	800 V
Micro Commercial Components RL256GP-TP	Axial R-3	Standard	Standard Recovery >500ns	200 mA	150 °C	-55 °C	5 µA	R-3		Through Hole	40 pF	800 V	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 2.5A Through Hole R-3

Technical documentation and resources