Discrete Semiconductor Products

SI1024X-T1-GE3

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MOSFET 2N-CH 20V 485MA SC89

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Discrete Semiconductor Products

Active

MOSFET 2N-CH 20V 485MA SC89

Technical Specifications

Parameters and characteristics for this part

Specification	SI1024X-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	485 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.75 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	250 mW
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	SC-89 (SOT-563F)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	900 mV

Part	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Configuration	Power - Max [Max]	FET Feature	Technology	Package / Case	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI1024X-T1-E3	20 V	Surface Mount	SC-89 (SOT-563F)	0.75 nC	900 mV	-55 °C	150 °C	485 mA	2 N-Channel (Dual)	250 mW	Logic Level Gate	MOSFET (Metal Oxide)	SOT-563 SOT-666	700 mOhm
Vishay General Semiconductor - Diodes Division SI1024X-T1-GE3	20 V	Surface Mount	SC-89 (SOT-563F)	0.75 nC	900 mV	-55 °C	150 °C	485 mA	2 N-Channel (Dual)	250 mW	Logic Level Gate	MOSFET (Metal Oxide)	SOT-563 SOT-666	700 mOhm

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General part information

Mosfet Array 20V 485mA 250mW Surface Mount SC-89 (SOT-563F)

Technical documentation and resources