Discrete Semiconductor Products

ES2G-M3/52T

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DIODE GEN PURP 400V 2A DO214AA

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Discrete Semiconductor Products

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DIODE GEN PURP 400V 2A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	ES2G-M3/52T

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Package / Case	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Reverse Recovery Time (trr)	Speed	Technology	Supplier Device Package	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division ES2G-M3/52T	1.1 V	10 µA	15 pF	DO-214AA SMB	2 A	150 °C	-55 °C	Surface Mount	50 ns	200 mA 500 ns	Standard	SMB	DO-214AA	400 V
Vishay General Semiconductor - Diodes Division ES2G/1	1.1 V	10 µA	15 pF	DO-214AA SMB	2 A	150 °C	-50 °C	Surface Mount	50 ns	200 mA 500 ns	Standard	SMB	DO-214AA	400 V

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General part information

Diode 400 V 2A Surface Mount DO-214AA (SMB)

Technical documentation and resources

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