Discrete Semiconductor Products

S4D04120A

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DIODE SIL CARB 1.2KV 4A TO220AC

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Discrete Semiconductor Products

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DIODE SIL CARB 1.2KV 4A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	S4D04120A

Capacitance @ Vr, F	302 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC (TO-220-2)
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Speed	Technology	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Capacitance @ Vr, F
SMC Diode Solutions S4D04120E	No Recovery Time	SiC (Silicon Carbide) Schottky	Surface Mount	20 µA	4 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 ░C	-55 C	1.2 kV	DPAK	1.8 V	0 ns	302 pF
SMC Diode Solutions S4D04120A	No Recovery Time	SiC (Silicon Carbide) Schottky	Through Hole	20 µA	4 A	TO-220-2	175 ░C	-55 C	1.2 kV	TO-220AC (TO-220-2)	1.8 V	0 ns	302 pF

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General part information

Diode 1200 V 4A Through Hole TO-220AC (TO-220-2)

Technical documentation and resources