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TO-220-3
Discrete Semiconductor Products

HUF75339P3

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 75 A, 55 V, 12 MOHM, 10 V, 4 V ROHS COMPLIANT: YES

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TO-220-3
Discrete Semiconductor Products

HUF75339P3

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 75 A, 55 V, 12 MOHM, 10 V, 4 V ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationHUF75339P3
Current - Continuous Drain (Id) @ 25°C75 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]130 nC
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)200 W
Rds On (Max) @ Id, Vgs12 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.68
10$ 1.73
100$ 1.19
320$ 0.94
500$ 0.96
1000$ 0.89
2000$ 0.82
5000$ 0.81
NewarkEach 1$ 2.74
10$ 1.73
100$ 1.61
500$ 1.46
1600$ 1.36
ON SemiconductorN/A 1$ 0.87

Description

General part information

HUF75339P3 Series

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.