Discrete Semiconductor Products

KBU8J-E4/51

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BRIDGE RECT 1PHASE 600V 8A KBU

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Discrete Semiconductor Products

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BRIDGE RECT 1PHASE 600V 8A KBU

Technical Specifications

Parameters and characteristics for this part

Specification	KBU8J-E4/51

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	KBU, 4-SIP
Supplier Device Package	KBU
Technology	Standard
Voltage - Peak Reverse (Max) [Max]	600 V

Part	Supplier Device Package	Technology	Package / Case	Diode Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Peak Reverse (Max) [Max]
Vishay General Semiconductor - Diodes Division KBU8G-E4/51	KBU	Standard	4-SIP KBU	Single Phase	8 A	10 µA	Through Hole	150 °C	-50 °C	400 V
Vishay General Semiconductor - Diodes Division KBU8D-E4/51	KBU	Standard	4-SIP KBU	Single Phase	8 A	10 µA	Through Hole	150 °C	-50 °C	200 V
Vishay General Semiconductor - Diodes Division KBU8J-E4/51	KBU	Standard	4-SIP KBU	Single Phase	8 A	10 µA	Through Hole	150 °C	-50 °C	600 V
Vishay General Semiconductor - Diodes Division KBU8B-E4/51	KBU	Standard	4-SIP KBU	Single Phase	8 A	10 µA	Through Hole	150 °C	-50 °C	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 600 V Through Hole KBU

Technical documentation and resources