Specification	FDPF12N50FT

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1395 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDPF12N50FT Series

Power MOSFET, N-Channel, UniFETTM, FRFET®, 500 V, 11.5 A, 700 mΩ, TO-220F

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Mounting Type	FET Type	Power Dissipation (Max)	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDPF12N50FT	1395 pF	30 nC	500 V	11.5 A	700 mOhm	MOSFET (Metal Oxide)	TO-220F-3	Through Hole	N-Channel	42 W	30 V	TO-220-3 Full Pack	5 V	10 V	-55 °C	150 °C
ON Semiconductor FDPF12N50FT	1395 pF	30 nC	500 V	11.5 A	700 mOhm	MOSFET (Metal Oxide)	TO-220F-3	Through Hole	N-Channel	42 W	30 V	TO-220-3 Full Pack	5 V	10 V	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	286	$ 1.05
		286	$ 1.05

Description

General part information

FDPF12N50FT Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET®MOSFET has been enhanced by lifetime control. Its trris less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.