KSC4010RTU

Obsolete

TRANS NPN 120V 6A TO3PN

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 120V 6A TO3PN

Technical Specifications

Parameters and characteristics for this part

Specification	KSC4010RTU

Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	55
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	60 W
Supplier Device Package	TO-3PN
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Operating Temperature	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor KSC4010OTU	60 W	120 V	SC-65-3 TO-3P-3	150 °C	NPN	2.5 V	Through Hole	TO-3PN	10 µA	30 MHz	80
ON Semiconductor KSC4010RTU	60 W	120 V	SC-65-3 TO-3P-3	150 °C	NPN	2.5 V	Through Hole	TO-3PN	10 µA	30 MHz		55

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 120 V 6 A 30MHz 60 W Through Hole TO-3PN

Technical documentation and resources