Littelfuse Power Semi TO-263 3 1S2C image

Discrete Semiconductor Products

IXTA48N20T

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 TO-263D2/ TUBE

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Discrete Semiconductor Products

IXTA48N20T

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHTRENCHGATE-GEN1 TO-263D2/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA48N20T

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	3090 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs [Max]	50 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

IXTA48N20T Series

DiscMSFT NChTrenchGate-Gen1 TO-263D2

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Littelfuse/Commercial Vehicle Products IXTA48N20T	TO-263AA	-55 °C	175 ░C	250 W	60 nC	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	48 A	N-Channel	4.5 V	3090 pF	MOSFET (Metal Oxide)	Surface Mount	50 mOhm	200 V	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.18
		50	$ 3.32
		100	$ 2.84
Newark	Each	100	$ 2.79
		500	$ 2.54
		1000	$ 2.24
		2500	$ 2.08

Description

General part information

IXTA48N20T Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density

Documents

Technical documentation and resources