Discrete Semiconductor Products
RFN6BM2DFHTL
ActiveRohm Semiconductor
SUPER FAST RECOVERY DIODE (AEC-Q101 QUALIFIED)
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Discrete Semiconductor Products
RFN6BM2DFHTL
ActiveRohm Semiconductor
SUPER FAST RECOVERY DIODE (AEC-Q101 QUALIFIED)
Technical Specifications
Parameters and characteristics for this part
| Specification | RFN6BM2DFHTL |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 6 A |
| Current - Reverse Leakage @ Vr | 10 ÁA |
| Diode Configuration | 1 Pair Common Cathode |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 25 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-252 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 980 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2600 | $ 1.06 | |
Description
General part information
RFN6BM2DFH Series
RFN6BM2DFH is the silicon epitaxial planar type Fast Recovery Diode.
Documents
Technical documentation and resources