Discrete Semiconductor Products

SIAA00DJ-T1-GE3

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MOSFET N-CH 25V 20.1A/40A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 25V 20.1A/40A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIAA00DJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	40 A, 20.1 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1090 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W
Power Dissipation (Max)	19.2 W
Rds On (Max) @ Id, Vgs	5.6 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]
Vishay General Semiconductor - Diodes Division SIAA00DJ-T1-GE3	Surface Mount	20.1 A 40 A	4.5 V 10 V	5.6 mOhm	1090 pF	3.5 W	19.2 W	-55 °C	150 °C	2.5 V	MOSFET (Metal Oxide)	24 nC	PowerPAK® SC-70-6	N-Channel	PowerPAK® SC-70-6	25 V	-12 V 16 V

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General part information

N-Channel 25 V 20.1A (Ta), 40A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources